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Chemically amplified molecular resists for electron beam lithography

✍ Scribed by A.P.G. Robinson; H.M. Zaid; F.P. Gibbons; R.E. Palmer; M. Manickam; J.A. Preece; R. Brainard; T. Zampini; K. O’Connell

Book ID
108207609
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
261 KB
Volume
83
Category
Article
ISSN
0167-9317

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✍ D. Macintyre; S. Thoms 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 271 KB

The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV