In this paper, a model for computer simulation of the exposure and the development of the CAMP6 chemically amplified resist (CAR) during electron beam lithography is proposed. The distribution of the absorbed electron energy in the exposed resist is determined using our Monte Carlo algorithm and com
Exposure Simulation Model for Chemically Amplified Resists
β Scribed by Sang-Kon Kim
- Publisher
- Optical Society of Japan
- Year
- 2003
- Tongue
- English
- Weight
- 389 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1340-6000
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
In this work, a time-dependent postexposure bake (PEB) simulator is presented by solving a set of reaction-diffusion equations modeling the deprotection reaction of polymers and the diffusion of acids in chemically amplified resists. The simulator is time-dependent in the sense that model parameters
The knowledge of the structural changes that occur during the lithographic process using chemically amplified resists (CARs) is of great importance in process and resist optimization. Molecular dynamics (MD) is a suitable method for the simulation of these microscopic changes. A detailed description