## Abstract The results of this study show that, for given initial and boundary conditions, four parameters are sufficient to describe the final product distribution of azo coupling reactions influenced by mixing. This is in agreement with the prediction of the mixing‐reaction model developed previ
Simulation of the Postexposure Bake Process of Chemically Amplified Resists by Reaction–Diffusion Equations
✍ Scribed by Tsung-Lung Li
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 149 KB
- Volume
- 173
- Category
- Article
- ISSN
- 0021-9991
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✦ Synopsis
In this work, a time-dependent postexposure bake (PEB) simulator is presented by solving a set of reaction-diffusion equations modeling the deprotection reaction of polymers and the diffusion of acids in chemically amplified resists. The simulator is time-dependent in the sense that model parameters including both reaction parameters and diffusion coefficients are treated as time-dependent functions in the entire course of the PEB process. The alternating direction implicit method is utilized to iteratively solve the set of reaction-diffusion equations. An error-control scheme is devised for automatic time-stepping. This PEB simulator is, hence, capable of simulating the effects of the temperature-time history of a wafer. It is then applied to simulate the resist profiles of line/space patterns and contact holes.
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