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Characterization of GeSi layers formed by high dose Ge implantation into Si

✍ Scribed by W.Y. Cheung; S.P. Wong; I.H. Wilson; T.H. Zhang

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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Characterization of SiGe/Si heterostruct

✍ A. Fukami; K. Shoji; T. Nagano; C. Y. Yang 📂 Article 📅 1990 🏛 American Institute of Physics 🌐 English ⚖ 563 KB

The evolution of the Si/SiO2 interface i

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Oxygen distributions in synthesized SiO2

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Formation of unstrained Si1−xGex. layers

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Formation of relaxed Si1−xGex layers on

✍ B. Holländer; S. Mantl; W. Michelsen; S. Mesters 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 206 KB