✦ LIBER ✦

Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si

✍ Scribed by F. Cristiano; A. Nejim; B. de Mauduit; A. Claverie; P.L.F. Hemment

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of GeSi layers formed b

✍ W.Y. Cheung; S.P. Wong; I.H. Wilson; T.H. Zhang 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 283 KB

Synthesis of oxides in Si0.5Ge0.5 alloy

✍ J.E. Castle; H.D. Liu; J.F. Watts; P.L.F. Hemment; J.P. Zhang; S.M. Newstead; A. 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 368 KB

The evolution of the Si/SiO2 interface i

✍ R.J. Chater; J.A. Kilner; P.L.F. Hemment; K.J. Reeson; J.R. Davis 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 308 KB

Strain induced defects in Si1−xGex-alloy

✍ Prayoon Songsiriritthigul; G. Holmén 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 861 KB