Formation of unstrained Si1−xGex. layers by high-dose 74Ge ion implantation in SIMOX
✍ Scribed by B. Holländer; S. Mantl; W. Michelsen; S. Mesters; A. Hartmann; L. Vescan; D. Gerthsen
- Book ID
- 113285767
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 517 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The availability of high-current implanters, now makes it possible to perform high-dose ion-implantations. By modifying the implant species, dose, energy and substrate temperature and by choosing the suitable thermal annealing conditions buried layers below a monocrystalline Si overlayer can be for
SIMOX (separation by implanted oxygen) wafers were implanted with high doses of cobalt and annealed at high temperatures in order to study the formation of buried single-crystal CoSi 2 layers in this material. For this study SIMOX wafers of (100) oriented silicon were implanted at 100-200 keV with d