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Solid phase epitaxial regrowth of Si1−xGex layers formed by single-energy Ge+, double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

✍ Scribed by Zheng Xia


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
312 KB
Volume
34
Category
Article
ISSN
0921-5107

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