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Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

✍ Scribed by Kenji Kajiyama

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
473 KB
Volume
85
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES

Effects of internal postoxidation on the
Effects of internal postoxidation on the oxygen deficiency and dielectric strength of buried oxide formed by the separation-by-implanted-oxygen (SIMOX) process
✍ Kwang Soo Seol; Hidemi Koike; Tsuyoshi Futami; Yoshimichi Ohki πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 151 KB

Effects of internal postoxidation on buried silicon dioxide have been studied. The dioxide examined was the buried insulator in a silicon-on-insulator (SOI) structure fabricated by implantation of oxygen ions into Si, or the SIMOX process. Internal postoxidation is an oxidation process applied to th