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Cascode connected AlGaN/GaN HEMTs on SiC substrates

✍ Scribed by Green, B.M.; Chu, K.K.; Smart, J.A.; Tilak, V.; Hyungtak Kim; Shealy, J.R.; Eastman, L.F.

Book ID: 119789124
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 111 KB
Volume: 10
Category: Article
ISSN: 1051-8207
DOI: 10.1109/75.862226

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Subject classification: 73.30.+y; 73.40.Kp; S7.14 Undoped AlGaN/GaN HEMTs grown on SiC substrates have recently demonstrated record output power density of 10.7 W/mm (cw) and total output power of 10 W at 10 GHz (L. F. Eastman, Joint ONR/MURI Review (5/15-16, 2001), CA (USA) [1]). In this paper, we