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2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates

✍ Scribed by Tonisch, Katja; Jatal, Wael; Granzner, Ralf; Kittler, Mario; Baumann, Uwe; Schwierz, Frank; Pezoldt, Jörg

Book ID
120015198
Publisher
Trans Tech Publications, Ltd.
Year
2010
Tongue
English
Weight
567 KB
Volume
645-648
Category
Article
ISSN
1662-9752

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## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote