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A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates

✍ Scribed by Wang, Cong; Cho, Sung Jin; Lee, Won Sang; Kim, Nam Young

Book ID
120282753
Publisher
Springer
Year
2012
Tongue
English
Weight
991 KB
Volume
67
Category
Article
ISSN
0268-3768

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πŸ“œ SIMILAR VOLUMES

High temperature pulsed measurements of
High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate
✍ M. Werquin; D. Ducatteau; N. Vellas; E. Delos; Y. Cordier; R. Aubry; C. GaquiΓ¨re πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 82 KB

## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote