High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) Substrate

✍ Scribed by Husna, Fatima; Lachab, Mohamed; Sultana, Mahbuba; Adivarahan, Vinod; Fareed, Qhalid; Khan, Asif

• Book ID: 118041954
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 691 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2012.2204888