AlGaN/GaN MOSHEMT With High-Quality $\hbox{Gate}$–$\hbox{SiO}_{2}$ Achieved by Room-Temperature Radio Frequency Magnetron Sputtering

✍ Scribed by Pang, Liang; Lian, Yaguang; Kim, Dong-Seok; Lee, Jung-Hee; Kim, Kyekyoon

• Book ID: 120045959
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 892 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/TED.2012.2208463