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MBE-Grown AlGaN/GaN HEMTs on SiC

✍ Scribed by RAJAN, SIDDHARTH; CHAKRABORTY, ARPAN; MISHRA, UMESH K.; POBLENZ, CHRISTIANE; WALTEREIT, PATRICK; SPECK, JAMES S.

Book ID: 120273235
Publisher: World Scientific Publishing Company
Year: 2004
Tongue: English
Weight: 326 KB
Volume: 14
Category: Article
ISSN: 0129-1564
DOI: 10.1142/S0129156404002752

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## Abstract A detailed photoluminescence (PL), time‐resolved photoluminescence (TRPL), and photoreflectance (PR) analysis of AlGaN/GaN heterostructures grown on different substrates: sapphire and silicon carbide (SiC) is presented in this paper. The properties of high electron mobility transistors