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Atomic Layer Deposition of Tantalum Oxide Thin Films from Iodide Precursor

✍ Scribed by Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Forsgren, Katarina; Sundqvist, Jonas; Hårsta, Anders; Uustare, Teet; Mändar, Hugo; Kiisler, Alma-Asta

Book ID
126860389
Publisher
American Chemical Society
Year
2001
Tongue
English
Weight
108 KB
Volume
13
Category
Article
ISSN
0897-4756

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Atomic Layer Deposition of Ruthenium Thi
Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor
✍ Hongtao Wang; Roy G. Gordon; Roger Alvis; Robert M. Ulfig 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 846 KB

## Abstract Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis(__N__,__N__'‐di‐__tert__‐butylacetamidinato)ruthenium(II) dicarbonyl and O~2~. Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, __E__~O~, approaches a certain threshold (__E_