## Abstract Thin films of SnO~2~ have been successfully deposited by atomic layer deposition (ALD) using the SnI~4~/O~2~ precursor combination. Depositions were carried out in the temperature range 400–750 °C on SiO~2~/Si(100) and single‐crystalline α‐Al~2~O~3~(012) substrates. The films were found
✦ LIBER ✦
Atomic layer deposition of polycrystalline HfO2 films by the HfI4–O2 precursor combination
✍ Scribed by J. Sundqvist; A. Hårsta; J. Aarik; K. Kukli; A. Aidla
- Book ID
- 108388551
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 130 KB
- Volume
- 427
- Category
- Article
- ISSN
- 0040-6090
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