## Abstract Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700βΒ°C. The resulting films were found to be iodineβfree above 450βΒ°C, and
β¦ LIBER β¦
Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination
β Scribed by Erik Lindahl; Mikael Ottosson; Jan-Otto Carlsson
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 580 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0948-1907
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