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Application of DLTS and Laplace-DLTS to defect characterization in high-resistivity semiconductors

โœ Scribed by L.F. Makarenko; J.H. Evans-Freeman


Book ID
103885380
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
158 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defect