Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Deep level transient spectroscopy (DLTS)

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

✍ C. Nyamhere; A.G.M. Das; F.D. Auret; A. Chawanda; C.A. Pineda-Vargas; A. Venter 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 373 KB

Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1 Â 10 13 protons/cm 2 . The results show that proton irradiation resulted in primary hole traps at E V þ0.15 and E V þ

Characterization of defects introduced in Sb doped Ge by 3&#xa0;keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)