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Detection of Point Defect Inhomogeneities in III-V Semiconductors by Scanning-DLTS

✍ Scribed by Breitenstein, O. ;Diegner, B.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
195 KB
Volume
94
Category
Article
ISSN
0031-8965

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Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an