Annealing studies of cluster defects in
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M.A. Gad; J.H. Evans-Freeman
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Article
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2006
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Elsevier Science
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English
โ 166 KB
High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 โข 10 10 cm ร2 . The low dose ens