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A DLTS study of defects formed in silicon during ion beam mixing

โœ Scribed by F.D. Auret; J.B. Malherbe; M. Nel; G. Myburg


Book ID
113279064
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
391 KB
Volume
35
Category
Article
ISSN
0168-583X

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Annealing studies of cluster defects in
โœ M.A. Gad; J.H. Evans-Freeman ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 166 KB

High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 โ€ข 10 10 cm ร€2 . The low dose ens