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A DLTS and RBS analysis of the angular dependence of defects introduced in Si during ion beam channelling using 435 keV alphaparticles

✍ Scribed by P.N.K. Deenapanray; M.C. Ridgway; F.D. Auret; E. Friedland


Book ID
114169785
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
467 KB
Volume
136-138
Category
Article
ISSN
0168-583X

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