✦ LIBER ✦

DLTS and EPR study of defects in H implanted silicon

✍ Scribed by V Mikšić; B Pivac; B Rakvin; H Zorc; F Corni; R Tonini; G Ottaviani

Book ID: 114165203
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 273 KB
Volume: 186
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(01)00919-3

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of defects in silicon after low en

Study of defects in silicon after low energy H+ implantation by DLTS measurements

✍ Krynicki, J. ;Muller, J. C. ;Siefert, P. ;Brylowska, I. ;Paprocki, K. 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 289 KB

High resolution Laplace DLTS studies of

High resolution Laplace DLTS studies of defects in ion-implanted silicon

✍ J.H Evans-Freeman; N Abdelgader; P.Y.Y Kan; A.R Peaker 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 99 KB

Annealing studies of cluster defects in

Annealing studies of cluster defects in ion-implanted silicon using high resolution DLTS

✍ M.A. Gad; J.H. Evans-Freeman 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 166 KB

High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 • 10 10 cm À2 . The low dose ens

EPR Studies of defects in silicon

✍ Dr. E. Weber 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 442 KB 👁 1 views

High-resolution DLTS studies of vacancy-

High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

✍ J.H Evans-Freeman; A.R Peaker; I.D Hawkins; P.Y.Y Kan; J Terry; L Rubaldo; M Ahm 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 129 KB

Defects in laser damaged silicon observe

Defects in laser damaged silicon observed by DLTS

✍ Mooney, P. M. ;Young, R. T. ;Karins, J. ;Lee, Y. H. ;Corbett, J. W. 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 198 KB