Study of defects in silicon after low energy H+ implantation by DLTS measurements
β Scribed by Krynicki, J. ;Muller, J. C. ;Siefert, P. ;Brylowska, I. ;Paprocki, K.
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 289 KB
- Volume
- 100
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 β’ 10 10 cm Γ2 . The low dose ens
Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)
Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa