✦ LIBER ✦
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
✍ Scribed by Cloud Nyamhere; P.N.K. Deenapanray; F.D. Auret; F.C. Farlow
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 162 KB
- Volume
- 376-377
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B-and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.