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AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

โœ Scribed by E.A. Douglas; C.Y. Chang; D.J. Cheney; B.P. Gila; C.F. Lo; Liu Lu; R. Holzworth; P. Whiting; K. Jones; G.D. Via; Jinhyung Kim; Soohwan Jang; Fan Ren; S.J. Pearton


Book ID
108210917
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
890 KB
Volume
51
Category
Article
ISSN
0026-2714

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## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov