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Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

✍ Scribed by E.A. Douglas; C.Y. Chang; B.P. Gila; M.R. Holzworth; K.S. Jones; L. Liu; Jinhyung Kim; Soohwan Jang; G.D. Via; F. Ren; S.J. Pearton

Book ID: 113800608
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 931 KB
Volume: 52
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.09.018

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