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The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

✍ Scribed by Xinwen Hu; Choi, B.K.; Barnaby, H.J.; Fleetwood, D.M.; Schrimpf, R.D.; Sungchul Lee; Shojah-Ardalan, S.; Wilkins, R.; Mishra, U.K.; Dettmer, R.W.

Book ID: 114663625
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 458 KB
Volume: 51
Category: Article
ISSN: 0018-9499
DOI: 10.1109/tns.2004.825077

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