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Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

✍ Scribed by Kuzmik, J.; Jurkovič, M.; Gregušová, D.; Ťapajna, M.; Brunner, F.; Cho, M.; Meneghesso, G.; Würfl, J.

Book ID: 127025053
Publisher: American Institute of Physics
Year: 2014
Tongue: English
Weight: 750 KB
Volume: 115
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4873301

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