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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

✍ Scribed by Joh, J.; del Alamo, J.A.; Jimenez, J.


Book ID
111942700
Publisher
IEEE
Year
2008
Tongue
English
Weight
329 KB
Volume
29
Category
Article
ISSN
0741-3106

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## Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interl