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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

✍ Scribed by Jungwoo Joh; Feng Gao; Tomás Palacios; Jesús A. del Alamo

Book ID: 108210869
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 762 KB
Volume: 50
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.02.015

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