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Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

✍ Scribed by Rousseau, M.; Soltani, A.; De Jaeger, J. C.


Book ID
115475832
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
632 KB
Volume
101
Category
Article
ISSN
0003-6951

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