✦ LIBER ✦

Accurate Modeling of Minimum Noise Figure in Algan/Gan High Electron Mobility Transistors

✍ Scribed by Xu, Y.; Guo, Y.; Wu, Y.; Xu, R.; Yan, B.; Lin, W.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Mechanisms of gate lag in GaN/AlGaN/GaN

✍ Oleg Mitrofanov; Michael Manfra 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 801 KB

Low temperature characteristics of AlGaN

✍ Lin, D.F.; Wang, X.L.; Xiao, H.L.; Wang, C.M.; Qiang, L.J.; Feng, C.; Chen, H.; 📂 Article 📅 2011 🏛 EDP Sciences 🌐 English ⚖ 586 KB

Hot-electron induced defect generation i

✍ Rao, Hemant; Bosman, Gijs 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 434 KB

Theoretical model of transport character

✍ A. Asgari; M. Kalafi; L. Faraone 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 270 KB

Low-Frequency Noise in AlGaN/GaN High El

✍ S.A. Vitusevich; N. Klein; M.V. Petrychuk; A.E. Belyaev; S.V. Danylyuk; R.V. Kon 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 222 KB

Effects of Threading Dislocations on AlG

✍ Marino, F.A.; Faralli, N.; Palacios, T.; Ferry, D.K.; Goodnick, S.M.; Saraniti, 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 444 KB