Low-Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ-Ray Quanta

Influence of surface passivation on low-

Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures

✍ Vitusevich, S. A. ;Petrychuk, M. V. ;Danylyuk, S. V. ;Kurakin, A. M. ;Klein, N. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 208 KB

## Abstract We investigated low‐frequency noise in passivated and nonpassivated AlGaN/GaN high electron mobility transistor (HEMT) heterostructures grown on SiC substrate. The heterostructure layers are grown without intentionally doping the barrier material and two‐dimensional gas appears at the i