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Requirements for low intermodulation distortion in GaN-Alx Ga1-xN high electron mobility transistors: a model assessment

✍ Scribed by Tao Li; Joshi, R.P.; del Rosario, R.D.


Book ID
114616833
Publisher
IEEE
Year
2002
Tongue
English
Weight
306 KB
Volume
49
Category
Article
ISSN
0018-9383

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