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Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

✍ Scribed by Saito, Wataru; Takada, Yoshiharu; Kuraguchi, Masahiko; Tsuda, Kunio; Omura, Ichiro; Ogura, Tsuneo

Book ID: 127106999
Publisher: Institute of Pure and Applied Physics
Year: 2004
Tongue: English
Weight: 167 KB
Volume: 43
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.43.2239

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