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Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications

✍ Scribed by Maeda, Narihiko ;Tawara, Takehiko ;Saitoh, Tadashi ;Tsubaki, Kotaro ;Kobayashi, Naoki

Book ID: 105361881
Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 144 KB
Volume: 200
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200303468

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