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An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

✍ Scribed by Sona P. Kumar; Anju Agrawal; Sneha Kabra; Mridula Gupta; R.S. Gupta

Book ID
104051229
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
239 KB
Volume
37
Category
Article
ISSN
0026-2692

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