An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications

✍ Scribed by Huang, J.C.; Jackson, G.S.; Shanfield, S.; Platzker, A.; Saledas, P.K.; Weichert, C.

• Book ID: 114551527
• Publisher: IEEE
• Year: 1993
• Tongue: English
• Weight: 865 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9480
• DOI: 10.1109/22.234507