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Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

✍ Scribed by Kobayashi, Kengo; Hatakeyama, Shinya; Yoshida, Tomohiro; Yabe, Yuhei; Piedra, Daniel; Palacios, Tomás; Otsuji, Taiichi; Suemitsu, Tetsuya

Book ID: 126473744
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 609 KB
Volume: 7
Category: Article
ISSN: 1882-0778
DOI: 10.7567/APEX.7.096501

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