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Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing

✍ Scribed by Liu, Lu; Xi, Yuyin; Ahn, Shihyun; Ren, Fan; Gila, Brent P.; Pearton, Stephen J.; Kravchenko, Ivan I.

Book ID: 127333531
Publisher: AVS (American Vacuum Society)
Year: 2014
Tongue: English
Weight: 953 KB
Volume: 32
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.4891168

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