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A novel insulated gate technology for ingaas high electron mobility transistors using silicon interlayer based passivation technique

✍ Scribed by S. Suzuki; S. Kodama; H. Tomozawa; H. Hasegawa


Book ID
112820179
Publisher
Springer US
Year
1996
Tongue
English
Weight
676 KB
Volume
25
Category
Article
ISSN
0361-5235

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