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A Q-band CMOS low-noise amplifier using a low-voltage cascode in 0.13-μm CMOS technology

✍ Scribed by Seong-Gwon Lee; Jong-Wook Lee

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
638 KB
Volume
53
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

A Q‐band low‐noise amplifier (LNA) suitable for low‐voltage operation is presented in this paper.The amplifier uses a low‐voltage cascode structure in the first stage of the amplifier and was fabricated using a 0.13‐μm RF CMOS process with eight layers of copper metallization. Low‐voltage operation of the LNA was achieved in the millimeter‐wave band while still maintaining the high‐gain advantage of the cascode structure. Measured results show that the amplifier adopting the low‐voltage cascode structure provides similar gain to the conventional, telescopic cascode structure. The fabricated amplifier presented here achieves a 19.5‐dB small‐signal gain and a 7.5‐dB noise figure at 45 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2985–2988, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26389

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