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A hot-carrier degradation mechanism and electrical characteristics in S4D n-MOSFET's

✍ Scribed by Yoshitomi, T.; Saito, M.; Ohguro, T.; Ono, M.; Momose, H.S.; Morifuji, E.; Morimoto, T.; Katsumata, Y.; Iwai, H.

No coin nor oath required. For personal study only.

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