A coupled study by floating-gate and charge-pumping techniques of hot carrier-induced defects in submicrometer LDD n-MOSFET's

✍ Scribed by Vuillaume, D.; Marchetaux, J.-C.; Lippens, P.-E.; Bravaix, A.; Boudou, A.

• Book ID: 114535090
• Publisher: IEEE
• Year: 1993
• Tongue: English
• Weight: 946 KB
• Volume: 40
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.202790