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A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy

โœ Scribed by A. P. Odrinskii


Book ID
110138078
Publisher
Springer
Year
2004
Tongue
English
Weight
77 KB
Volume
38
Category
Article
ISSN
1063-7826

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โœ A. M. Bakry; A. M. Elnaggar ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Springer US ๐ŸŒ English โš– 152 KB

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot