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Determination of the concentration of deep levels in semi-insulating CdS single crystals by photoinduced-current transient spectroscopy

✍ Scribed by A. P. Odrinskii


Book ID
110143139
Publisher
Springer
Year
2005
Tongue
English
Weight
93 KB
Volume
39
Category
Article
ISSN
1063-7826

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Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot