✦ LIBER ✦

Measurements of deep trap concentration in diodes with a high Schottky barrier by deep-level transient spectroscopy

✍ Scribed by E. N. Agafonov; A. N. Georgobiani; L. S. Lepnev

Book ID: 110131519
Publisher: Springer
Year: 2002
Tongue: English
Weight: 66 KB
Volume: 36
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1485665

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of deep levels in Schottky/CuInSe2

Study of deep levels in Schottky/CuInSe2single-crystal devices by deep-level transient spectroscopy measurements

✍ A. M. Bakry; A. M. Elnaggar 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 152 KB

Deep-level transient spectroscopy (DLTS) measurements performed on Schottky/CulnSe2 diodes are reported. So far, Cd(Zn)S has been used as a window n-type layer to prepare CulnSe2 diodes. The diffusion of such a layer introduced defects into Cd(Zn)S-CulnSe2 diodes. Thus, the importance of using Schot

Observation of minority-carrier traps in

Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy

✍ E. N. Agafonov; U. A. Aminov; A. N. Georgobiani; L. S. Lepnev 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 80 KB

Investigation of Radiation Damage in Sil

Investigation of Radiation Damage in Silicon Produced by Fast Neutron Irradiation with Lifetime Measurements and Deep Level Transient Spectroscopy

✍ Stefanov, K. D. ;Hardalov, Ch.M. ;Sueva, D. 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 250 KB 👁 1 views

A critical analysis of investigation of

A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy

✍ A. P. Odrinskii 📂 Article 📅 2004 🏛 Springer 🌐 English ⚖ 77 KB

Deep level transient spectroscopy signat

Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

✍ E. PŁaczek-Popko; J. Trzmiel; E. Zielony; S. Grzanka; R. Czernecki; T. Suski 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 351 KB

In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequen