Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
✍ Scribed by E. PŁaczek-Popko; J. Trzmiel; E. Zielony; S. Grzanka; R. Czernecki; T. Suski
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 351 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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✦ Synopsis
In this study, we present the results of investigation on p-n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77-350 K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequently Mg-doped GaN layers were grown. To perform DLTS measurements Ni/Au contacts to p-type material and Ti/Au contacts to n-type material were processed. DLTS signal spectra revealed the presence of two majority traps of activation energies obtained from Arrhenius plots equal to E 1 ¼ 0.22 eV and E 2 ¼ 0.65 eV. In present work we show that the trap E 1 is linked with the extended defects whereas the trap E 2 is the point defect related. Its capture cross section is thermally activated with energy barrier for capture equal to 0.2 eV.